BUL1102E high voltage fast-switching npn power transistor preliminary data n high voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed applications n four lamp electronic ballast for: 120 v mains in push-pull configuration; 277 v mains in half bridge current feed configuration. description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide rbsoa. thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. internal schematic diagram february 2002 1 2 3 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 1100 v v ceo collector-emitter voltage (i b = 0) 450 v v ebo emitter-base voltage (i c = 0) 12 v i c collector current 4 a i cm collector peak current (t p <5 ms) 8 a i b base current 2 a i bm base peak current (t p <5 ms) 4 a p tot total dissipation at tc = 25 o c70w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c to-220 ? 1/5
thermal data r thj-case thermal resistance junction-case max 1.78 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1100 v 100 m a i ebo emitter cut-off current (i b = 0) v eb = 12 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 100 ma 450 v v ce(sat) * collector-emitter saturation voltage i c = 2 a i b = 400 ma 1.5 v v be(sat) * base-emitter saturation voltage i c = 2 a i b = 400 ma 1.5 v h fe * dc current gain i c = 250 ma v ce = 5 v i c = 2 a v ce = 5 v 35 10 70 20 t s t f resistive load storage time fall time i c = 2.5 a v cc = 250 v i b1 = 0.5 a i b2 = 1 a t p = 30 m s (see figure 2) 2.5 300 m s ns e sb avalanche energy l = 2 mh c = 1.8 nf i br 2.5a 25 o c < t c <125 o c (see figure 1) 6mj * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating areas derating curve BUL1102E 2/5
reverse biased soa figure 1: energy rating test circuit figure 2: resistive load switching test circuit BUL1102E 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data BUL1102E 4/5
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